Chemical precursors and OLED materials | https://www.tosohsmd.com

For more information on our precursor offerings, contact us.

In North America and Europe, and through our subsidiaries of TSMD Taiwan and TSMD Korea, Tosoh SMD is the sales representative for chemical precursor and OLED materials developed by Tosoh Corporation for advanced semiconductor and display applications. Tosoh Corporation has developed chemical Precursors to provide important process, film, and cost of ownership advantages.

DER

(2,4-Dimethylpentadienyl)

(Ethylcyclopentadienyl)Ruthenium

One such material developed by Tosoh Corporation and now being evaluated by customers is Ru precursor, DER. The structure of DER is unique which provides properties that are advantageous compared to competitor’s Ru precursors.

The DER structure provides short incubation time for deposition and a lower effective deposition temperature. Dense film nucleation, smooth film morphology, and excellent step coverage are achieved using the DER. Contact us for additional information.

Process	Element		Precursor			Characteristics
MOCVD	Metal	Ru	RuDER®	Melting point	: 17°C	Extremely short incubation time Higher nucleation density than Ru(EtCp)₂ Excellent step coverage
				Vapor pressure	: 0.1Torr (@75°C)
				Decomp. Temp.	: 270°C
				Viscosity	: 7cp (@25°C)
			Rudense®	Melting point	: 28°C	Area selective Ru deposition under reductive condition Extremely short incubation time Excellent step coverage
				Vapor pressure	: 0.1Torr (@76°C)
				Decomp. Temp.	: 230°C
				Viscosity	: 15cp (@65°C)
		Ir	Ts-Ir5	Melting point	: 15°C	High thermal stability No incubation time High nucleation density
				Vapor pressure	: 0.1Torr (@75°C)
				Decomp. Temp.	: 300°C
				Viscosity	: 35cP (@25°C)
		Co	Ts-Co10	Melting point	: < -20°C	Area selective Co deposition under reductive condition Co film deposition at low temperature (≤200°C) High deposition rate and excellent step coverage
				Vapor pressure	: 0.1Torr (@88°C)
				Decomp. Temp.	: 214°C
				Viscosity	: no data
	Oxide	Ti	Ts-Ti9	Melting point	: < -20°C	Extremely short incubation time High deposition rate Excellent step coverage
				Vapor pressure	: 0.1Torr (@59°C)
				Decomp. Temp.	: 340°C
				Viscosity	: no data
		Ta	Ts-Ta7	Melting point	: 11°C	High vapor pressure High reactivity with O₂ Excellent step coverage
				Vapor pressure	: 0.1Torr (@46°C)
				Decomp. Temp.	: 240°C
				Viscosity	: no data
		Nb	Ts-Nb10	Melting point	: 20°C	High vapor pressure High reactivity with O₂ Excellent step coverage
				Vapor pressure	: 0.1Torr (@50°C)
				Decomp. Temp.	: 260°C
				Viscosity	: no data
		Hf	Ts-Hf3	Melting point	: < -20°C	High vapor pressure High deposition rate compared to TEMAHf Excellent step coverage
				Vapor pressure	: 0.1Torr (@77°C)
				Decomp. Temp.	: 236°C
				Viscosity	: no data
		Zr	Ts-Zr2	Melting point	: < -20°C	High vapor pressure Sufficient thermal stability High deposition rate compared to TEMAZr
				Vapor pressure	: 0.1Torr (@68°C)
				Decomp. Temp.	: 242°C
				Viscosity	: no data
		Bi	Ts-Bi6	Melting point	: < -20°C	No danger of explosion below 88 degC High vapor pressure compared to BiPh₃ Sufficient thermal stability
				Vapor pressure	: 0.1Torr (@55°C)
				Decomp. Temp.	: 230°C
				Viscosity	: 7cP (@25°C)
		Al	Ts-Al4	Melting point	: < -15°C	Non-pyrophoric Liquid at room temperature High vapor pressure compared to Al(NEt₂)₃
				Vapor pressure	: 0.1Torr (@44°C)
				Decomp. Temp.	: 328°C
				Viscosity	: no data
		Si	SiTBAS®	Melting point	: liquid at rt	Sufficient thermal stability High reactivity with O₂ High deposition rate compared to TDMAS
				Vapor pressure	: 0.1Torr (@28°C)
				Decomp. Temp.	: 320°C
				Viscosity	: no data
	Nitride	Si	SiTBIS®	Melting point	: < -20°C	High thermal stability React with NH₃ at 400°C Excellent step coverage
				Vapor pressure	: 0.1Torr (@34°C)
				Decomp. Temp.	: 300°C
				Viscosity	: no data
PECVD	Low-k	SiOCH	TD-50	Melting point	: < -20°C	Good vapor pressure and thermal stability Porogen free process k=2.55, Modulus 7GPa
				Vapor pressure	: 1Torr (@86°C)
				Decomp. Temp.	: 237°C
				Viscosity	: no data
	Gas Barrier	SiO₂	TG-4E	Flash point	: 53°C	High gas barrier WVTR=2.4x10^-4 g/m²/day Colorless and transparent film Good flexibility with high barrier performance
				Vapor pressure	: 100Torr (@124°C)
				Decomp. Temp.	: 290°C
				Viscosity	: no data

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Chemical Precursors

If you are interested in our chemical precursors, please contact us through the contact form below for more information:

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